MEMS sensors for flow measurement in harsh environments
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    /2 Technological developments of 3C–SiC thermal devices/2.5 Characterizations

    #2.5 Characterizations

    #2.5.1 Characterization setup

    #2.5.2 TCR measurement

    2026-02-11T18:06:10.327897 image/svg+xml Matplotlib v3.10.1, https://matplotlib.org/ 5.00 5.20 5.40 5.60 R e s i s t a n c e   ( k ) Ω Extrinsic domain (negative TCR) Metal-like domain (positive TCR) 100 200 300 400 500 Temperature (°C) -500 0 500 TCR (ppm/K)
    Figure 2.5.
    Sic TCR
    2025-12-09T16:42:02.250301 image/svg+xml Matplotlib v3.10.1, https://matplotlib.org/ 0 25 50 75 R e s i s t a n c e   ( M ) Ω 200 300 400 500 600 700 Temperature (°C) -10 000 -7 500 -5 000 TCR (ppm/K)
    Figure 2.6.
    Low-doping TCR

    #2.5.3 Resistance-Power characteristic

    We need to match the heating power with the average resistance