MEMS sensors for flow measurement in harsh environments
Ctrl + K
    ↑ ↓ navigate ↩ select Esc close
    /2 Development of a batch fabrication process for 3C-SiC wall shear stress sensors/2.2 3C–SiC calorimeters

    #2.2 3C–SiC calorimeters

    800 nm 50 µm 300 µm 3.4 mm 3C-SiC gold contactpads silicon layer borosilicatesubstrate lateral measurementwires (LW) central heatingwire (CW) 4.9 mm
    Figure 2.2.
    SiC calorimeter structure.
    SiC calorimeter heating
    Figure 2.3.
    SiC calorimeter heating

    #2.2.1 Dry etching process

    #2.2.2 Global flowchart

    <100>Si wafer 3C-SiCepitaxy Backside grinding+ polishing Anodic bonding toa borosilicatewafer Borosilicate Ti/Au padsevaporation DRIE ofSiC + Si XeF2 wirerelease 300 µm 50 µm 800 nm 250 nm 6 µm 6 µm Si 3C-SiC
    Figure 2.4.
    Fabrication flowchart for SiC calorimeters.